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2SK1300
Silicon N Channel MOS FET
REJ03G0919-0200 (Previous: ADE-208-1258) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * *
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
D G
1. Gate 2. Drain (Flange) 3. Source S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1300
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch
*1
Ratings 100 20 10 40 10 40 150 -55 to +150
Unit V V A A A W
*2
Tstg
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 100 20 -- -- 1.0 -- -- 4.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.20 0.25 7.0 525 205 60 5 50 170 75 1.2 220 Max -- -- 10 250 2.0 0.25 0.35 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns IF = 10 A, VGS = 0 IF = 10 A, VGS = 0, diF/dt = 50 A/s Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 5 A, VGS = 10 V * 3 ID = 5 A, VGS = 4 V * ID = 5 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 5 A, VGS = 10 V, RL = 6
3
3
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1300
Main Characteristics
Power vs. Temperature Derating
60
100
Maximum Safe Operation Area
Ta = 25C
30
10
Channel Dissipation Pch (W)
Drain Current ID (A)
s
10 0
40
10
C D
PW
1
s
s
=
m
3 1 0.3 0.1
10
tio ra pe O
m
s
(1
20
Sh
Operation in this area is limited by RDS (on)
n (T C
ot
)
=
) C 25
0
50
100
150
1
3
10
30
100
300
1000
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20
Typical Transfer Characteristics
10
10 V
Pulse Test 6V
VDS = 10 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
16
4V
8
12
6
3.5 V
8
4
3V
4
VGS = 2.5 V
2
TC = 75C
25C -25C
2 3 4 5
0
4
8
12
16
20
0
1
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance RDS (on) ()
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS (on) (V)
2.5 2.0
Static Drain to Source on State Resistance vs. Drain Current
5
Pulse Test 10 A
Pulse Test
2
1 0.5
VGS = 4 V 10 V
1.5
5A
1.0
0.2 0.1 0.05 0.5
0.5
ID = 2 A
0
2
4
6
8
10
1
2
5
10
20
50
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1300
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance yfs (S)
0.5
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
50 VDS = 10 V 20 Pulse Test 10 5
25C 75C
Pulse Test
0.4
ID = 10 A
5A 2A 10 A 5A
TC = -25C
0.3
VGS = 4 V
2A
0.2
10 V
2 1 0.5 0.1
0.1
0 -40
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature TC (C)
Drain Current ID (A)
Body to Drain Diode Reverse Recovery Time
500 10,000
Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50 di/dt = 50 A/s VGS = 0, Ta = 25C Pulse Test
1,000 Ciss
20 10 5 0.1
100
Coss
VGS = 0 f = 1 MHz 10 0.2 0.5 1 2 5 10 0 10 20 30
Crss
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
200 160 20 500
Switching Characteristics
Gate to Source Voltage VGS (V)
td(off)
120 VDS
VDD = 25 V 50 V 80 V
VGS 12
Switching Time t (ns)
16
200 100 tf 50 20 10 5 0.2 tr VGS = 10 V, PW . 2 s = duty < 1 % VDD = 30 V . td(on) 0.5 1 2 5 10 20
80 40
8 ID = 10 A 4
VDD = 80 V 50 V 25 V 8 16 24
0
32
0 40
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1300
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
Pulse Test 16
12
8 5V 4 VGS = 10 V 0, -5 V 0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 1.0 D=1 0.5 0.3 0.1
0.2
0.1
TC = 25C
0.05 0.02
1 0.0 Pulse ot Sh 1
ch-c (t) = s (t) * ch-c ch-c = 3.13C/W, TC = 25C PDM PW 1 D =PW T
0.03 0.01 10
T 1m 10 m 100 m
100
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T RL Vout 50 Vin = 10 V . VDD = 30 V . td (on) Vin 10 %
Waveforms
90 %
10 % 90 % tr 90 % td (off)
10 %
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1300
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AC-A
Package Name TO-220AB / TO-220ABV
MASS[Typ.] 1.8g
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6
+0.2 -0.1
+0.1 -0.08
4.44 0.2 1.26 0.15
6.4
18.5 0.5
15.0 0.3
1.27
2.7 Max
7.8 0.5
0.76 0.1
14.0 0.5
1.5 Max
2.54 0.5
2.54 0.5
0.5 0.1
Ordering Information
Part Name 2SK1300-E 500 pcs Quantity Box (Sack) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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